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Semiconductor Electronics cheat sheet

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Class 12 · Chapter 14Semiconductor Electronics

n-type: pentavalent donor; p-type: trivalent acceptor.

1. Semiconductors

  • Intrinsic: nₑ = nₕ.
  • n-type: doped with P, As (electrons majority).
  • p-type: doped with B, Al (holes majority).
  • Band gap: Si ≈ 1.1 eV, Ge ≈ 0.7 eV.

2. p–n Junction

  • Depletion layer and barrier potential form at the junction.
  • Forward bias: barrier lowers, current flows.
  • Reverse bias: tiny current, until breakdown.

3. Rectifiers

RectifierDiodesOutput frequency
Half-wave1same as input (50 Hz)
Full-wave (centre tap)2double (100 Hz)

Filter capacitors smooth the output.

4. Key Points

  • Conductors: overlapping bands.
  • Insulators: gap > 3 eV.
  • Doping increases conductivity.
  • Diode is non-ohmic.

Remember: n vs p type | biasing | half vs full-wave

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